Theoretical Analysis of Diamond Mechanosynthesis. Part II. C2 Mediated Growth of Diamond C(110) Surface via Si/Ge-Triadamantane Dimer Placement Tools
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چکیده
This paper presents a computational and theoretical investigation of the vacuum mechanosynthesis of diamond on the clean C(110) surface from carbon dimer (C2) precursors. Part I provided a detailed atomic picture of the dimer-mediated surface chemistry during the gas-phase growth of dehydrogenated diamond C(110) from C2 plasmas, deducing some of the many possible stabilized defects that can be formed early in the dimer-mediated diamond growth process. These results provided information regarding the outcomes of the misplacement of a carbon dimer and established constraints upon the required positional precision that would be needed to avoid the formation of stable defects during positional dimer placement to achieve diamond growth, or diamond mechanosynthesis, the subject of Part II of this paper. Merkle and Freitas have proposed the use of silicon and germanium functionalized derivatives of the hydrocarbon Theoretical Analysis of Diamond Mechanosynthesis. Part II. C2 Mediated Growth of Diamond C(110) Surface via Si/Ge-Triadamantane Dimer Placement Tools
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